NXP Semiconductors /QN908XC /FLASH /INT_STAT

Text Text Text Text Text Text Text Text Text Text Text Text Text Text Text Text Text Text Text Text Text Text Text Text Text Text Text

Interpret as INT_STAT

31 2827 2423 2019 1615 1211 87 43 0 0 0 0 0 0 0 0 00 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 (AHBL_INT)AHBL_INT 0 (LOCKL_INT)LOCKL_INT 0 (ERASEL_INT)ERASEL_INT 0 (WRITEL_INT)WRITEL_INT 0 (WRBUFL_INT)WRBUFL_INT 0 (WRITE_FAIL_L_INT)WRITE_FAIL_L_INT 0 (ERASE_FAIL_L_INT)ERASE_FAIL_L_INT 0 (AHBH_INT)AHBH_INT 0 (LOCKH_INT)LOCKH_INT 0 (ERASEH_INT)ERASEH_INT 0 (WRITEH_INT)WRITEH_INT 0 (WRBUFH_INT)WRBUFH_INT 0 (WRITE_FAIL_H_INT)WRITE_FAIL_H_INT 0 (ERASE_FAIL_H_INT)ERASE_FAIL_H_INT

Description

interrupt status register

Fields

AHBL_INT

It is low 256KB Flash AHB error interrupt stat. 1 indicates AHB operation error AHB error include: Write/read unmapped space; AHB align rules violation; Byte/half-word Flash write operation;

LOCKL_INT

It is low 256KB Flash Lock page be accessed interrupt status

ERASEL_INT

It is low 256KB Erase operation done interrupt status If erase is used, it indicates one erase is done.

WRITEL_INT

It is low 256KB write operation done interrupt status If write is used, it indicates one program is done.

WRBUFL_INT

It is low 256KB Write Buffer empty interrupt status 0 = write buffer is not empty 1 = write buffer is empty It is auto cleared when write buffer is written. It is enabled only when PRGML_EN is enabled and write buffer is empty

WRITE_FAIL_L_INT

When smart write of low 256KB Flash is enable, 0 = Smart write is successful, 1 = Smart write is fail.

ERASE_FAIL_L_INT

When smart erase of low 256KB Flash is enable, 0 = Smart erase is successful, 1 = Smart erase is fail.

AHBH_INT

it is high 256KB Flash AHB error interrupt stat 1 indicates AHB operation error AHB error include: Write/read unmapped space; AHB align rules violation; Byte/half-word Flash write operation;

LOCKH_INT

it is high 256KB Flash Lock page be accessed interrupt status

ERASEH_INT

it is high 256KB Flash Erase operation done interrupt status If erase is used, it indicates one erase is done.

WRITEH_INT

it is high 256KB Flash write operation done interrupt status If write is used, it indicates one program is done.

WRBUFH_INT

it is high 256KB Flash Write Buffer empty interrupt status 0 = write buffer is not empty 1 = write buffer is empty It is auto cleared when write buffer is written. It is enabled only when PRGMH_EN is enabled and write buffer is empty

WRITE_FAIL_H_INT

When smart write of high 256KB Flash is enable, 0 = Smart write is successful, 1 = Smart write is fail.

ERASE_FAIL_H_INT

When smart erase of high 256KB Flash is enable, 0 = Smart erase is successful, 1 = Smart erase is fail.

Links

()